The teaching of semiconductor devices physics is absolutely fundamental to the development of microelectronics. However, introductory courses in this area are frequently limited to report over-simplified analytical models which allow intuitive understanding, but are unable to capture the full complexity of today’s devices. On the other hand, in more advanced courses, accurate numerical models are developed, but the most intuitive view is sometimes lost. In this work, we seek to contribute in order to allow the beginner to make the connection between the two approaches (numerical vs. analytical modeling). To this end, we have developed a study on the electronic characteristics of High Electron Mobility Transistors (HEMTs), comparing results obtained with a simplified analytical models with those provided by an accurate numerical modeling, based on the finite difference method. The results are compared with available experimental results and the validity conditions for the analytical model are established.
Keywords:
field effect transistors; quantum wells; HEMTs; MODFETs
