Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing

Abstract

The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in terms of surface morphology, surface roughness, material removal mechanism and residual stress (by Raman spectroscopy). The surface morphology exhibited evidence of both material removal mechanisms: the brittle mode and the ductile mode. The surface roughness increased with a high v_f, which promoted the formation of craters on the sawn surface. On applying a higher v_c, the surface roughness reduced, since this favored the formation of damage-free grooves. The Raman spectrum showed evidence of different residual crystalline phases on the sawn surface, which confirms the material removal mechanisms. An increase in v_f, for the same v_c, caused at reduction in the compressive stress, since the brittle mode predominated as the material removal mechanism. Maintaining v_f constant and increasing v_c results in higher compressive stress, caused by plastic deformation of the silicon during chip formation.

Keywords:
Diamond wire sawing; Monocrystalline silicon; Brittle-to-ductile transition; Residual stress; Phase transformation