This work make synthesis of results obtained from PZT thin films processed by different ways to optimizes structural, dielectric and ferroelectric parameters. Films were prepared using conventional furnace and rapid thermal annealing (RTA). Results were compared and showing that films crystallized by RTA showed better crystallization, if compared with films crystallized by conventional furnace. Thus, better dielectric and ferroelectric parameters were also obtained, duplicating values of remanent polarization (Pr) and increasing substantially the dielectric constant (epsilon) of the films.
thin films; PZT; ferroelectric
