Theoretical calculations of electron-phonon scattering rates in GaAs/Al xGa1 - xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation.
Theoretical calculations; Electron-phonon scattering; GaAs/Al xGa1-xAs
