We have investigated the crystallization of amorphous SiGe films deposited on crystalline GaAs (001) substrates using ns laser pulses. Analysis of the film structure using Raman spectroscopy indicates the formation of heteroepitaxial Si xGe1/GaAs structures for Si compositions up to x = 25%. Higher compositions lead to polycrystalline films. This is attributed to the increased lattice mismatch between Si xGe1 and GaAs as the Si fraction in the alloy increases
